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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060B/D MRF18060B RF Power Field Effect Transistors MRF18060BR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. * GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts CW Efficiency -- 45% (Typ) @ 60 Watts CW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power * Excellent Thermal Stability * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. 1.90 - 1.99 GHz, 60 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF18060B CASE 465A-06, STYLE 1 NI-780S MRF18060BLSR3, MRF18060BSR3 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 -0.5, +15 180 1.03 -65 to +150 200 Unit Vdc Vdc Watts W/C C C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.97 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Common-Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1930 - 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps 11.5 40 IRL -- -- -10 45 -- dB 13 -- % dB Ciss Coss Crss -- -- -- 160 740 2.7 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2.5 -- -- -- 3.9 0.27 4.7 4 4.5 -- -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 6 1 Vdc Adc Adc Symbol Min Typ Max Unit No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch-to-batch consistency. MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 2 MOTOROLA RF DEVICE DATA Z5 VGG R1 R2 RF INPUT C1 R3 Z1 C9 Z2 C5 Z3 DUT Z4 C6 Z6 C7 Z7 C3 + C2 VDD RF OUTPUT C8 C4 C1, C3 C2 C4, C8 C5 C6 C7, C9 R1, R2 R3 10 pF, 100B Chip Capacitors 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF, 100B Chip Capacitors 1.0 pF, 100B Chip Capacitor 2.2 pF, 100B Chip Capacitor 0.3 pF, 100B Chip Capacitors 10 k Chip Resistors (0805) 1.0 k Chip Resistor (0805) Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB 0.60 x 0.09 Microstrip 1.00 x 0.09 Microstrip 0.51 x 0.94 Microstrip 0.59 x 0.98 Microstrip 0.79 x 0.09 Microstrip 1.38 x 0.09 Microstrip 0.79 x 0.09 Microstrip Teflon Glass Figure 1. 1930 - 1990 MHz Test Fixture Schematic VBIAS R1 C1 R3 C6 C5 C2 VSUPPLY R2 C9 C4 C3 C7 C8 Ground MRF18060 Ground Figure 2. 1930 - 1990 MHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 3 Vbias C1 R3 T2 R4 C3 R4 C7 C8 C6 MRF18060 Figure 4. 1800 - 2000 MHz Demo Board Component Layout MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 4 MOTOROLA RF DEVICE DATA I III III I I III II I III III II I I R2 R3 T2 II II II II II I III III III T1 T1 RF INPUT C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 C1 R1 R2 R5 Vsupply C2 C4 + C5 R6 RF OUTPUT Z1 C6 Z2 C7 Z3 Z4 Z6 Z5 C8 Z7 1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU-P (0805) 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU-P (0805) 1 pF Chip Capacitor, ACCU-P (0805) 10 Chip Resistor (0805) 1 k Chip Resistors (0805) 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 5 k, SMD Potentiometer T1 LP2951 Micro-8 Voltage Regulator T2 BC847 SOT-23 NPN Transistor Z1 0.159 x 0.055 Microstrip Z2 0.982 x 0.055 Microstrip Z3 0.087 x 0.055 Microstrip Z4 0.512 x 0.787 Microstrip Z5 0.433 x 1.220 Microstrip Z6 1.039 x 0.118 Microstrip Z7 0.268 x 0.055 Microstrip Substrate = 0.5 mm Teflon Glass, r = 2.55 Figure 3. 1800 - 2000 MHz Demo Board Schematic Vbias Ground Vsupply R1 T1 C4 R5 C2 C3 R6 MRF18060 C5 I II I II I I III II I III III III TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) 16 Pout , OUTPUT POWER (WATTS) 15 G ps, POWER GAIN (dB) 14 13 12 IDQ = 750 mA 100 90 80 70 60 50 40 30 20 10 0 1W VDD = 26 Vdc IDQ = 500 mA 18 20 24 26 22 VDD, SUPPLY VOLTAGE (VOLTS) 28 30 Pin = 5 W 2.5 W 500 mA 11 300 mA 10 9 8 1 100 mA VDD = 26 Vdc f = 1880 MHz 10 Pout, OUTPUT POWER (WATTS) 100 Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Supply Voltage 90 Pout , OUTPUT POWER (WATTS) 80 70 60 50 40 30 20 10 0 1800 1820 Pin = 6 W Pout , OUTPUT POWER (WATTS) 90 80 70 60 50 40 30 20 10 1880 1900 0 0 1 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz 2 3 4 Pin, INPUT POWER (WATTS) 5 6 h Pout 60 55 , DRAIN EFFICIENCY (%) 50 45 40 35 30 25 20 15 3W VDD = 26 Vdc IDQ = 500 mA 1W 0.5 W 1860 1840 f, FREQUENCY (MHz) Figure 7. Output Power versus Frequency Figure 8. Output Power and Efficiency versus Input Power 0 -2 -6 -8 -10 -12 -14 IRL VDD = 26 Vdc IDQ = 500 mA 2000 2100 -16 -18 -20 IRL, INPUT RETURN LOSS (dB) Gps -4 15.0 14.5 14.0 G ps, POWER GAIN (dB) 13.5 13.0 12.5 12.0 11.5 11.0 10.5 10.0 1700 1800 1900 f, FREQUENCY (MHz) Figure 9. Wideband Gain and IRL (at Small Signal) MOTOROLA RF DEVICE DATA MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 5 Zo = 5 Zload f = 1700 MHz f = 1700 MHz f = 2100 MHz Zsource f = 2100 MHz VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW f MHz 1700 1800 1900 2000 2100 Zsource 0.60 - j2.53 0.80 - j3.20 0.92 - j3.42 1.07 - j3.59 1.31 - j4.00 Zload 2.27 - j3.44 2.05 - j3.05 1.90 - j2.90 1.64 - j2.88 1.29 - j2.99 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 10. Series Equivalent Input and Output Impedance MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 B (FLANGE) 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H C (LID) M TA TA B B M ccc aaa M TA TA M B B M S M M M M M (INSULATOR) M ccc F E A A (FLANGE) T SEATING PLANE CASE 465-06 ISSUE F NI-780 MRF18060B STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) B (FLANGE) 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --0.040 --0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F E A A (FLANGE) T SEATING PLANE CASE 465A-06 ISSUE F NI-780S MRF18060BLSR3, MRF18060BSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MOTOROLA RF DEVICE DATA MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 7 Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 8 MOTOROLA RF DEVICE DATA MRF18060B/D |
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